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Nanoimprinted diffraction gratings for crystalline silicon solar cells: implementation, characterization and simulation

Alexander Mellor, Hubert Hauser, Christine Wellens, Jan Benick, Johannes Eisenlohr, Marius Peters, Aron Guttowski, Ignacio Tobías, Antonio Martí, Antonio Luque, and Benedikt Bläsi

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Abstract

Light trapping is becoming of increasing importance in crystalline silicon solar cells as thinner wafers are used to reduce costs. In this work, we report on light trapping by rear-side diffraction gratings produced by nano-imprint lithography using interference lithography as the mastering technology. Gratings fabricated on crystalline silicon wafers are shown to provide significant absorption enhancements. Through a combination of optical measurement and simulation, it is shown that the crossed grating provides better absorption enhancement than the linear grating, and that the parasitic reflector absorption is reduced by planarizing the rear reflector, leading to an increase in the useful absorption in the silicon. Finally, electro-optical simulations are performed of solar cells employing the fabricated grating structures to estimate efficiency enhancement potential.

©2013 Optical Society of America

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Figures (6)
Fig. 1
Fig. 1 (a): A schematic diagram of the solar cell precursors fabricated in this work. (b): A photograph of a nanoimprinted linear grating on a 4-inch c-Si wafer. (c) and (d): SEM micrographs of linear (c) and crossed (d) diffraction grating textures in c-Si wafers produced by the described NIL based process chain.

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Fig. 2
Fig. 2 A planar SiO layer deposited on a textured photo-resist-on-glass substrate via spin coating.

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Fig. 3
Fig. 3 SEM micrographs of the cross section of the rear side of two solar cell precursors with linear grating textures. (i): DBL deposited by PECVD. (ii): DBL deposited by spin-coating.

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Fig. 4
Fig. 4 The simulated geometry for each grating structure. Each image is labeled with the corresponding sample name. In A, the transparent layer between the Si and the Al represents the DBL.

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Fig. 5
Fig. 5 Absorption spectra for the solar cell precursors employing the grating structures. The structure name is shown in the top left of each graph. Red circles show the measured total absorption, black curves show the simulated total absorption, green curves show the simulated silicon absorption, and blue curves show the simulated aluminium absorption. The calculated jph,Si and jph,Al for each structure is shown in the inset of each graph.

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Fig. 6
Fig. 6 The measured and simulated polarization dependent reflection spectrum for Sample B. TE refers to transverse electric and TM to transverse magnetic polarization.

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Tables (3)

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Table 1 Grating Type and DBL Deposition Technique for Each Sample

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Table 2 Predicted IV Characteristics of 200 µm Thick c-Si Solar Cells Employing Each Grating Structure

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Table 3 Predicted IV Characteristics of 40 µm Thick c-Si Solar Cells Employing Each Grating Structure

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Equations (1)

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j ph,Si = q e ∫ Φ Am1.5G ab s Si dλ j ph,Al = q e ∫ λ<1.2μm Φ Am1.5G ab s Al dλ
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