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High transmission through ridge nano-apertures on Vertical-Cavity Surface-Emitting Lasers

Zhilong Rao, Lambertus Hesselink, and James S. Harris

Open Access Open Access

Abstract

We report high-intensity nano-aperture Vertical-Cavity Surface-Emitting Lasers (VCSELs) with sub-100nm near-field spots using ridge apertures. Power transmission efficiency through different ridge apertures, including bowtie, C, H and I-shaped apertures on VCSELs were studied. Significantly higher transmission efficiencies were obtained from the ridge apertures than those from conventional square apertures. Mechanisms for high transmission through the ridge apertures are explained through simulation and waveguide theory. A new quadruple-ridge aperture is proposed and designed via simulation. With the high-intensity and small spot size, VCSELs using these ridge nano-apertures are very promising means to realize applications such as ultrahigh-density near-field optical data storage and ultrahigh-resolution near-field imaging etc.

©2007 Optical Society of America

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Figures (12)
Fig. 1.
Fig. 1. Nano-aperture VCSEL structure

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Fig.2.
Fig.2. 2 distribution inside the top DBR pairs and SiO2 layer. The real part of the refractive index of each layer is also shown. The distance in x-axis starts from around the oxidation layer and goes up to the SiO2 layer.

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Fig. 3.
Fig. 3. Schematic structure of the ridge apertures. a) Bowtie aperture; b) C-aperture; c) H-aperture; d) I-aperture. The gray region is metal and the white region is air.

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Fig. 4.
Fig. 4. Near-field intensity distribution 20nm away; a) from the bowtie aperture; b) from the C-aperture; c) from the H-aperture; d) from the I-aperture. All the intensity patterns are normalized to incident intensity. The white lines are the outlines of these apertures.

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Fig. 5.
Fig. 5. Schematic structure of a double-ridge waveguide

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Fig. 6.
Fig. 6. Dependence of cutoff-wavelength of the double-ridge waveguide on gap distance.

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Fig. 7.
Fig. 7. Ex and Ez distribution at 5nm away from the bowtie-aperture. The incident light is polarized along X-direction. The field strength is normalized to incident field.

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Fig. 8.
Fig. 8. (a), (b) Ex and Ez distribution in XZ plane cut along center of two metals tips of the bowtie-aperture; (c), (d) Ex and Ez distribution in XZ plane cut along center of a 130nm square aperture. The Au film thickness for both the bowtie aperture and the square aperture is 150nm. The white lines in the figures show the outline of the Au film. Light is incident from top of the figures. The magnitudes of all field components here are normalized to the incident light.

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Fig. 9.
Fig. 9. Near-field E2 distribution at 20nm away from the bowtie-aperture. (a) The polarization is along X-direction; (b) the polarization is along Y-direction.

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Fig. 10.
Fig. 10. SEM image of the nano-slits and bowtie aperture

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Fig. 11.
Fig. 11. (a) Polarization-resolved power emitted through the substrate after opening slits; (b) Total far-field power from VCSELs using different ridge apertures and a square aperture.

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Fig.12.
Fig.12. (a), (b) Two different designs of quadruple-ridge aperture; (c), (d) Near-field intensity distribution 20nm away from aperture (a) and aperture (b) respectively. The intensity pattern is normalized to incident intensity. The incident light is polarized along x-direction.

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Tables (1)

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Table 1. Comparison of nano-aperture VCSELs using bowtie-aperture, C-aperture, H-aperture, I-aperture and square aperture. a

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Equations (1)

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− cot ⁡ ( π ( a − s ) λ c ) + b d tan ⁡ ( π s λ c ) + 2 ( b λ c ) ln ( cos ⁡ − 1 ( π d 2 b ) ) = 0
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