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High speed silicon Mach-Zehnder modulator

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Abstract

We demonstrate a silicon modulator with an intrinsic bandwidth of 10 GHz and data transmission from 6 Gbps to 10 Gbps. Such unprecedented bandwidth performance in silicon is achieved through improvements in material quality, device design, and driver circuitry.

©2005 Optical Society of America

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Figures (5)

Fig. 1.
Fig. 1. SEM cross-section of the new phase shifter with ELO-Si rib.
Fig. 2.
Fig. 2. Vertical line-cuts of the modeled mode profiles of the new device depicted in Fig. 1 and the first version of the device presented in [2,3]. The optical field intensity at the gate is higher for the new device which allows the gate charges to more strongly influence neff.
Fig. 3.
Fig. 3. Schematic of MZI, wire-bonds, and driver IC. Not drawn to scale.
Fig. 4.
Fig. 4. Impedance of a 315µm long phase-shift segment from the new ELO-Si device. The reactance is well modeled as a 2.4 pF capacitor, and the resistance is approximately 6.5 Ω, giving an RC cutoff of 10.2 GHz.
Fig. 5.
Fig. 5. Optical eye diagrams of modulator co-packaged with driver; both eye diagrams have the same vertical and horizontal scales. (a) 6 Gbps: ER, RT, and FT are 4.5 dB, 57 ps, and 54 ps, respectively. (b) 10 Gbps: ER, RT, and FT are 3.8 dB, 55 ps, and 56 ps, respectively. Measured modulation speed is limited by driver performance.
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