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Demonstration of directly modulated silicon Raman laser

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Abstract

The first Raman laser with intra-cavity electronic switching is demonstrated. Digital control of intra-cavity gain is attained by using a diode gain cavity. In contrast to traditional Raman lasers, the Raman laser reported here is made from pure silicon and can be directly modulated to transmit data. Room temperature operation with 2.5W peak laser output power is demonstrated.

©2005 Optical Society of America

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Figures (5)

Fig. 1.
Fig. 1. The experimental setup used for electronically switched silicon Raman laser. A diode laser cavity is used as a gain medium. By using an external current supply the laser output is electronically controlled.
Fig. 2.
Fig. 2. Input-output characteristic of the silicon Raman laser exhibiting a sharp threshold at 9W peak pump pulse power. Inset shows the geometry of the device used in our experiments.
Fig. 3.
Fig. 3. Measured coherent anti-Stokes emission at 1443 nm. Wavelength of anti-Stokes emission matches the expected 15.6 THz up shifting of the 1560 nm pump laser.
Fig. 4.
Fig. 4. Demonstration of electronic switching of the silicon Raman laser. 2.5 mA peak current with 200 ps rise and fall times is applied to the on-chip diode.
Fig. 5.
Fig. 5. Electronic modulation results of the silicon Raman laser.
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