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All-optoelectronic terahertz system using low-temperature-grown InGaAs photomixers

C. Baker, I. S. Gregory, M. J. Evans, W. R. Tribe, E. H. Linfield, and M. Missous

Open Access Open Access

Abstract

We demonstrate, for the first time, an all-optoelectronic continuous-wave terahertz photomixing system that uses low-temperature grown InGaAs devices both for emitters and coherent homodyne detectors. The system is compatible with fiber-optic excitation wavelengths, and we compare the performance to the more common LT-GaAs photomixers.

©2005 Optical Society of America

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Figures (3)
Fig. 1.
Fig. 1. Schematic diagram showing the cw-THz apparatus with the combining beamsplitter, optical delay line, and THz photomixers. The inset on the left shows the spiral antenna, and to the right, the interdigitated fingers located at the central feed of the spiral.

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Fig. 2.
Fig. 2. THz power as a function of applied bias for an all LT-InGaAs cw-photomixer system. Shown in the insets are an interferogram (top left) and normalized Fourier transform (bottom right) for an applied bias of 7 V.

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Fig. 3.
Fig. 3. Plots of the roll-off in photomixer emitted power (measured using a bolometer) as a function of frequency for LT-GaAs and LT-InGaAs.

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Tables (1)

Tables Icon

Table 1. Comparison of the carrier lifetime (τ), and illuminated device resistance (Rdevice), along with the current (I), bias (V), and dissipated electrical power (P), for both LT-GaAs and LT-InGaAs emitters shown in Fig. 3.

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