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Optical bistability and pulsating behaviour in Silicon-On-Insulator ring resonator structures.

G. Priem, P. Dumon, W. Bogaerts, D. Van Thourhout, G. Morthier, and R. Baets

Open Access Open Access

Abstract

We demonstrate optical bistability in a Silicon-On-Insulator two-bus ring resonator with input powers as low as 0.3mW . We evaluate the importance of the different nonlinear contributions and derive time constants for carrier and thermal relaxation effects. In some cases, we also observe pulsation due to interaction between the dominant nonlinear effects. Such a behaviour may be problematic for possible memory and switching operations. Alternatively, it could be used for (tunable) pulse generation.

©2005 Optical Society of America

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Figures (7)
Fig. 1.
Fig. 1. Physical picture of the nonlinear interactions in Silicon for wavelengths around half the band gap.

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Fig. 2.
Fig. 2. Example of a ring resonator structure fabricated through deep UV lithography.

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Fig. 3.
Fig. 3. (a) Normalized transmission of the pass and the drop port in the linear regime. (b) Detailed measurement around the resonance wavelength λc = 1556.97nm

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Fig. 4.
Fig. 4. Normalized transmission of the drop port for different input powers. The linear pass and drop transmissions are indicated as reference. Bistability is obtained for powers equal and above 0.277mW

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Fig. 5.
Fig. 5. (a) Nonlinear resonance transmission Tmax and (b) resonance shift ∆λ at the drop port as a function of the cavity power.

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Fig. 6.
Fig. 6. Different nonlinear contributions to the refractive index change inside the ring resonator as function of the cavity power.

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Fig. 7.
Fig. 7. Normalized average transmission and standard deviation at the drop port for an input power of 0.76mW . The blue curve corresponds to a (manual) wavelength sweep from low to high, the violet curve from high to low.

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