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Red microchip VECSEL array

Jennifer E. Hastie, Lynne G. Morton, Stephane Calvez, Martin D. Dawson, Tomi Leinonen, Markus Pessa, Graham Gibson, and Miles J. Padgett

Open Access Open Access

Abstract

We report an InGaP/AlInGaP/GaAs microchip vertical-external-cavity surface emitting laser operating directly at red wavelengths and demonstrate its potential for array-format operation. Optical pumping with up to 3.3W at 532nm produced a maximum output power of 330mW at 675nm, in a single circularly-symmetric beam with M2<2. Simultaneous pumping with three separate input beams, generated using a diffractive optical element, achieved lasing from three discrete areas of the same chip. Output power of ~95mW per beam was obtained from this 3×1 array, each beam having a Gaussian intensity profile with M2<1.2. In a further development, a spatial light modulator allowed computer control over the orientation and separation of the pump beams, and hence dynamic control over the configuration of the VECSEL array.

©2005 Optical Society of America

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Figures (5)
Fig. 1.
Fig. 1. (a) Power transfer of the microchip VECSEL for mount temperatures of -5°C and 5°C, respectively. Inset: Far-field profile of the output beam. (b) Output spectrum of the microchip VECSEL at high power.

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Fig. 2.
Fig. 2. Schematic diagram of the 3 × 1 VECSEL array set-up, showing the plan view and the side view of the pump and signal beams. Inset: photographs of the lasing microchip wafer (right) and the output beams on the screen (left).

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Fig. 3.
Fig. 3. (a) Measured profile of each output beam with a Gaussian fit to the data points. (b) Power transfer of each beam.

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Fig. 4.
Fig. 4. Output spectrum of each beam. The peak wavelengths of the spectra for the top, middle and bottom output beams are 676.2nm, 675.2nm and 674nm, respectively.

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Fig. 5.
Fig. 5. Experimental set-up for controlling the VECSEL array with a spatial light modulator (SLM). Inset: (1.56 MB) movie of the rotating VECSEL beams

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