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The temperature dependent performance analysis of EDFAs pumped at 1480 nm: A more accurate propagation equation

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Abstract

An analytically expression for the temperature dependence of the signal gain of an erbium-doped fiber amplifier (EDFA) pumped at 1480 nm are theoretically obtained by solving the propagation equations with the amplified spontaneous emission (ASE). It is seen that the temperature dependence of the gain strongly depends on the distribution of population of Er3+-ions in the second level. In addition, the output pump power and the intrinsic saturation power of the signal beam are obtained as a function of the temperature. Numerical calculations are carried out for the temperature range from -20 to +60 °C and the various fiber lengths. But the other gain parameters, such as the pump and signal wavelengths and their powers, are taken as constants. It is shown that the gain decreases with increasing temperature within the range of L≤27 m.

©2005 Optical Society of America

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Figures (3)

Fig. 1.
Fig. 1. Two level amplification system and main transitions of erbium ion.
Fig. 2.
Fig. 2. Simulation setup for measurement of the co-propagating ASE power in an Er3+-doped optical fiber amplifier (from OptiAmplifier 4.0).
Fig. 3.
Fig. 3. Gain as a function of fiber length. Pp (0)=30 mW and Ps (0)=10 µW.

Tables (2)

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Table 1. Typical fiber parameters for an Al/P-silica erbium-doped fiber (from Ref.[12]).

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Table 2. The relevant fiber parameters as a function of temperature.

Equations (20)

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β = N 2 + N 2 = C nr + C nr = exp ( Δ E 2 k B T )
d N 2 + dt = R p a N 1 R p e N 2 + + C nr N 2 C nr + N 2 + ,
d N 2 dt = S 12 N 1 S 21 N 2 N 2 γ C nr N 2 + C nr + N 2 + ,
d N 1 dt = R p e N 2 + R p a N 1 + S 21 N 2 S 12 N 1 + N 2 γ .
N 2 = τ [ ( σ p a N 1 β σ p e N 2− ) I p h v p + ( σ s a N 1 σ s e N 2 ) ( I s + I ASE ± ) h v s ] ,
N 2 N = I p b p a + ( I s + I ASE ± ) b s a ( 1 + β ) I p b p a + β I p b p e + ( 1 + β + η ) ( I s + I ASE ± ) b s a + 1
d P s d z = 2 π 0 I s [ σ s e N 2 ( r ) σ s a N 1 ( r ) ] rdr ,
d P p dz = ± 2 π 0 I p [ β σ p e N 2 ( r ) σ p a N 1 ( r ) ] rdr ,
d P ASE ± dz = ± 2 h v s 0 2 π σ s e N 2 f ASE ± ( r ) rdr ± 2 π 0 [ σ s e N 2− ( r ) σ s a N 1 ( r ) ] P ASE ± f ASE ± rdr ,
P ASE ± = P ASE + + P ASE .
d P s dz = 2 π σ s a P s ( 1 + β + η ) 0 N 2 f 2 ( r ) rdr P s α s ,
0 N 2 rdr = 0 τ I p h v p ( σ p a N 1 β σ p e N 2 ) rdr + 0 τ I s h v s ( σ s a N 1 σ s e N 2 ) rdr
+ 0 τ I ASE + h v s ( σ s a N 1 σ s e N 2 ) rdr ,
0 N 2 rdr = τ 2 π h v p d P p dz τ 2 π h v s d P s dz τ 2 π h v s d P ASE + dz + 2 τ σ s e 0 N 2 f ( r ) rdr ,
0 N 2 f ( r ) rdr = τ 2 π ( A Γ 2 τ σ s e ) [ 1 h v p d P p dz + 1 h v s ( d P s dz + d P ASE + dz ) ] ,
d P s dz = P s ( α s + h v s P s int [ 1 h v p d P p dz + 1 h v s ( d P s dz + d P ASE + dz ) ] ) ,
P s int = h v s ( A 2 τ σ s e Γ ) τ σ s a Γ ( 1 + β + η ) .
P s ( L ) P s ( 0 ) = exp ( α s L ) exp ( h v s P s int [ P p ( 0 ) P p ( L ) h v p + ( P s ( 0 ) + P ASE + ( 0 ) ) ( P s ( L ) + P ASE + ( L ) ) h v s ] ) .
G = exp ( α s L ) exp ( h v s P s int [ P p ( 0 ) P p ( L ) h v p P s ( 0 ) h v s ( 1 G ) P ASE + ( L ) h v s ] ) ,
P p ( L ) = 1 R ( η b p a β b p e ) ,
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