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High performance single photon sources from photolithographically defined pillar microcavities

A. J. Bennett, D. C. Unitt, P. Atkinson, D. A. Ritchie, and A. J. Shields

Open Access Open Access

Abstract

We demonstrate that single photons can be generated from single InAs/GaAs quantum dots in photolithographically defined pillar microcavities. Pillars with a 1.9 µm diameter cavity show a four fold enhancement in the radiative decay rate due to the Purcell effect and a photon collection efficiency into a lens of up to 10%. Measurements of the second order correlation function reveal a greater than fifty fold reduction in the multi-photon emission rate compared to a laser of the same intensity.

©2005 Optical Society of America

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Figures (4)
Fig. 1.
Fig. 1. (a). SEM of pillar microcavities with diameters (left to right) of 5, 4, 3 and 2 µm. (b) micro-PL spectra, recorded at high excitation densities (0.3 KW cm-2) and averaged over several “empty” pillars. A dotted line indicates the wavelength of the HE11 mode.

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Fig. 2.
Fig. 2. Time-resolved decays of an exciton (X) line on resonance (red line) and away from resonance (black line) with the cavity mode at 5 K with and excitation density of 0.3 W cm-2. Insert: micro-PL spectra from the same pillar with and X state resonant with the cavity mode under low (red, 0.3 W cm-2) and high excitation levels (black, 0.9 KW cm-2).

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Fig. 3.
Fig. 3. Pulsed correlation measurements from a pillar with a single exciton emission line near the cavity resonance at 939.2 nm, for (a) quasi-resonant excitation at a wavelength of 910.9 nm, coincident with an excited state in the QD and (b) above bandgap excitation at 750 nm. P corresponds to a power density of 16 KWcm-2.

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Fig. 4.
Fig. 4. Single photon interferogram from the X state, with excitation resonant with an excited state in the QD.

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