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Imaging of large-scale integrated circuits using laser terahertz emission microscopy

Masatsugu Yamashita, Kodo Kawase, Chiko Otani, Toshihiko Kiwa, and Masayoshi Tonouchi

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Abstract

We present the redesign and improved performance of the laser terahertz emission microscope (LTEM), which is a potential tool for locating electrical failures in integrated circuits. The LTEM produces an image of the THz waves emitted when the circuit is irradiated by a femtosecond laser; the amplitude of the THz emission is proportional to the local electric field. By redesigning the optical setup and improving the spatial resolution of the system to below 3 µm, we could extend its application to examining of large-scale integration circuits. As example we show the THz emission pattern of the electric field in an 8-bit microprocessor chip under bias voltage.

©2005 Optical Society of America

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Figures (4)
Fig. 1.
Fig. 1. Schematic diagram of the laser terahertz emission microscope.

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Fig. 2.
Fig. 2. The widths of the lines and gaps in the test pattern (a) are 30, 10, 5, 1.5 and 1 µm. THz emission profile (b) from the test pattern is obtained by a line scan measurement with fixing the time delay at the position indicated by an arrow in the temporal waveform (c) of the THz emission. (d) The amplitude spectrum of the THz emission from the line and space pattern.

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Fig. 3.
Fig. 3. (a) The temporal waveform of the THz emission from an LSI 8-bit microprocessor chip and (b) its Fourier spectrum. (c) The THz emission image of the microprocessor.

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Fig. 4.
Fig. 4. (a) The magnified THz emission image of the area indicated by the white square in Fig. 3 (c). (b) The cross-sectional distribution of the THz emission image at the dotted line in Fig. 4 (a).

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