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Electrooptic modulation up to 40 GHz in a barium titanate thin film waveguide modulator

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Abstract

The high frequency operation of a low-voltage electrooptic modulator based on a strip-loaded BaTiO3 thin film waveguide structure has been demonstrated. The epitaxial BaTiO3 thin film on an MgO substrate forms a composite structure with a low effective dielectric constant of 20.8 at 40 GHz. A 3.9 V half-wave voltage with a 3.7 GHz 3-dB bandwidth and a 150 pm/V effective electrooptic coefficient is obtained for the 3.2mm-long modulator at 1.55 µm. Broadband modulation up to 40 GHz is measured with a calibrated detection system. Numerical simulations indicate that the BaTiO3 thin film modulator has the potential for a 3-dB operational bandwidth in excess of 40 GHz through optimized design.

©2004 Optical Society of America

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Figures (5)

Fig. 1.
Fig. 1. (a) Schematic cross-section of the electrooptic waveguide modulator. (b) Low frequency electrooptic modulator performance at 1561 nm wavelength. Applied 1 kHz triangle-driving voltages with 2 V DC bias on 3.2 mm long electrode (bottom trace, 4 V/div) and modulation output signal (top trace, 0.2 V/div).
Fig. 2.
Fig. 2. Schematic diagram of the modulator characterization setup.
Fig.3.
Fig.3. Microwave power loss characterization of the electrodes. (a) Reflected loss (S11); (b) transmitted loss (S21); (c) fitted loss assuming a linear and square root frequency dependence; (d) dielectric and radiation losses assuming a linear frequency dependence; (e) conductor loss assuming a square root frequency dependence.
Fig. 4.
Fig. 4. (a) Measured 35 ps time delay for a 3.2 mm long electrodes. (b) Calculated effective microwave index as a function of frequency through measured electrical S-parameters.
Fig. 5.
Fig. 5. Frequency response of the modulator. (a) Measured response from the calibrated detection system; (b) predicted response for Zm=30 Ω, Nm=3.3 at 40 GHz, αc=1.0 1 dB·cm -1·GHz -0.5 and αd=0.3 dB·cm -1·GHz -1 ; (c) calculated response for Zm=45 Ω, Nm=3.3 at 40 GHz, αc=0.5 dB·cm -1·GHz -0.5 and αd=0.3 dB·cm -1·GHz -1.

Equations (4)

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α ( f ) = α c · L · f + α d · L · f
N m = c · τ L
ε B a T i O 3 / m g O = 2 · N m 2 1
F = ( 1 . 484 n eff 3 r eff Γ α c λ G )
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