Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Journal Home About Issues in Progress Current Issue All Issues Feature Issues

Dual-diode quantum-well modulator for C-band wavelength conversion and broadcasting

Hilmi Volkan Demir, Vijit A. Sabnis, Onur Fidaner, James S. Harris, David A. B. Miller, and Jun-Fei Zheng

Open Access Open Access

Abstract

We present a dual-diode, InGaAsP/InP quantum-well modulator that incorporates a monolithically-integrated, InGaAs photodiode as a part of its on-chip, InP optoelectronic circuit. We theoretically show that such a dual-diode modulator allows for wavelength conversion with 10-dB RF-extinction ratio using 7 mW absorbed optical power at 10 Gb/s. We experimentally demonstrate unlimited wavelength conversion across 45 nm between 1525 nm and 1570 nm, and dual-wavelength broadcasting over 20 nm between 1530 nm and 1565 nm, spanning the entire C-band with >10dB RF-extinction ratio and using 3.1–6.7 mW absorbed optical power at 1.25 Gb/s.

©2004 Optical Society of America

Full Article  |  PDF Article
More Like This
Integrated photonic switches for nanosecond packet-switched optical wavelength conversion

Onur Fidaner, Hilmi Volkan Demir, Vijit A. Sabnis, Jun-Fei Zheng, James S. Harris, and David A. B. Miller
Opt. Express 14(1) 361-368 (2006)

7×40 Gb/s base-rate RZ all-optical broadcasting utilizing an electroabsorption modulator

L. Xu, N. Chi, K. Yvind, L.J. Christiansen, L.K. Oxenløwe, J. Mørk, P. Jeppesen, and J. Hanberg
Opt. Express 12(3) 416-420 (2004)

All-optical signal regeneration with wavelength multicasting at 6×10 Gb/s using a single electroabsorption modulator

K. K. Chow and C. Shu
Opt. Express 12(13) 3050-3054 (2004)

View More...

Cited By

Optica participates in Crossref's Cited-By Linking service. Citing articles from Optica Publishing Group journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (8)
Fig. 1.
Fig. 1. A three-dimensional schematic of a dual-diode electroabsorption modulator (EAM), incorporating an on-chip photodiode (PD). The integrated optoelectronic circuit also includes a local thin film resistor.

Download Full Size | PDF

Fig. 2.
Fig. 2. (a) A simplified circuit of the integrated photodiode-modulator (PD-EAM), and (b) a simulated modulator transmission with >10dB extinction ratio at 10 Gb/s.

Download Full Size | PDF

Fig. 3.
Fig. 3. A plan-view CCD microscope picture of a fabricated photodiode-modulator switch.

Download Full Size | PDF

Fig. 4.
Fig. 4. SEM cross-sectional pictures across the photodiode-modulator integrated with the use of a polymer: (a) together, (b) in the vicinity of the photodiode, and (c) in the vicinity of the modulator.

Download Full Size | PDF

Fig. 5.
Fig. 5. (a) Optical switching in (a) NRZ and (b) RZ formats with >10dB RF-extinction ratios at 1.25 Gb/s; (b) 45-nm wavelength-conversion range between (b1) 1525.0 nm and (b2) 1570.0 nm at 1.25 Gb/s. (horizontal: 200 ps/div, vertical: 500 µW/div)

Download Full Size | PDF

Fig. 6.
Fig. 6. Experimental setup (MG: Melles Griot 6-axis stage, DCA: digital component analyzer, TX: transmitter, LD: cw-beam laser diode, EDFA: Erbium-doped fiber amplifier, BPF: band-pass filter, PC: polarization controller, ISO: isolator, P: probe)

Download Full Size | PDF

Fig. 7.
Fig. 7. 8×8 C-band wavelength conversion matrix for every possible combination of 8 input and 8 output wavelengths at 1530.0 nm, 1535.0 nm, 1540.0 nm, 1545.0 nm, 1550.0 nm, 1555.0 nm, 1560.0 nm, and 1565.0 nm. (horizontal: 200 ps/div, vertical: 448 µW/div)

Download Full Size | PDF

Fig. 8.
Fig. 8. C-band dual-wavelength broadcasting with channel spacings of 5 nm in (a1)-(a7), 10 nm in (b1)-(b3), and 20 nm in (c). (horizontal: 200 ps/div, vertical: 333µW/div)

Download Full Size | PDF

Tables (1)

Tables Icon

Table 1. Epitaxial layers of the modulator (left) and the photodiode (right). After growing the modulator and subsequently etching its selected areas down to the 3rd layer, the photodiode is grown only on the selected areas starting from its 4th layer [11]. (u.i.d.: un-intentionally-doped)

View Table
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use