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Self-organized formation of a Blazed-grating-like structure on Si(100) induced by focused ion-beam scanning

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Abstract

A new one-step method, which has been named self-organized formation, for microfabrication of blazed-grating-like structures after bombardment with a focused ion beam (FIB) with an ion energy of 50 keV and a beam current of 0.5 nA is presented. The structure is fabricated by the FIB by raster scanning (not by patterned scanning) upon a substrate of a silicon wafer, Si(100), with total scanning time of 14 min. With this method the parameters are unchanged during the whole process, unlike for the point-by-point direct writing technique, in which the exposure intensity or the electron- or ion-beam dose is changed for each point. The surface roughness of the structure, Ra, is 2.5 nm over an area of 1 µm×1 µm. To evaluate the performance of this method we carried out a simulation, using the PCGrate program. The simulated diffraction efficiency, of diffraction order -3 working in the reflection mode, can be as much as 79.1% for the violet wavelength of 400 nm. Using a He–Ne laser as the light source produced a measured diffraction efficiency of the order of -2 of 70.4%, which is near the simulated value of 76.9% at a wavelength of 600 nm. The depth and the period of the structure can be controlled by process parameters of the FIB, such as ion energy and ion flux.

©2004 Optical Society of America

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Figures (4)

Fig. 1.
Fig. 1. (615 KB Movie) Micrograph of the FIB image for the blaze-gratinglike structure generated by the self-organized formation after the FIB bombardment.
Fig. 2.
Fig. 2. Two-dimensional profile of the structure measured by use of an optical interferometer (WYKO NT 2000).
Fig. 3.
Fig. 3. Three-dimensional profile of the structure measured by use of an optical interferometer (WYKO NT 2000).
Fig. 4.
Fig. 4. Results of simulation of measured feature sizes by the professional software (PCGrate 2000). (a) Diffraction efficiency versus wavelength in the range 200–3000 nm. (b) Diffraction efficiency versus various orders for a working wavelength of 400 nm.
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