Abstract

We show time-resolved measurement of Raman gain in Silicon submicron-size planar waveguide using picosecond pump and probe pulses. A net nonlinear gain of 6 dB is obtained in a 7-mm long waveguide with 20.7-W peak pump power. We demonstrate an ultrafast all-optical switch based on the free-carrier dispersion effect in the silicon waveguide, whose transmission is enhanced by more than 13 dB due to the Raman effect.

©2004 Optical Society of America

Demonstration of high Raman gain in a submicrometer-size silicon-on-insulator waveguide

Qianfan Xu, Vilson R. Almeida, and Michal Lipson
Opt. Lett. 30(1) 35-37 (2005)

Net optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering

Ansheng Liu, Haisheng Rong, Mario Paniccia, Oded Cohen, and Dani Hak
Opt. Express 12(18) 4261-4268 (2004)

Raman amplification in ultrasmall silicon-on-insulator wire waveguides

Richard L. Espinola, Jerry I. Dadap, Richard M. Osgood, Sharee J. McNab, and Yurii A. Vlasov
Opt. Express 12(16) 3713-3718 (2004)

Influence of nonlinear absorption on Raman amplification in Silicon waveguides

R. Claps, V. Raghunathan, D. Dimitropoulos, and B. Jalali
Opt. Express 12(12) 2774-2780 (2004)

Net continuous wave optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering

Richard Jones, Haisheng Rong, Ansheng Liu, Alexander W. Fang, Mario J. Paniccia, Dani Hak, and Oded Cohen
Opt. Express 13(2) 519-525 (2005)