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Evolution of electromagnetic interference through nano-metallic double-slit

Kyu-Min Chae, Hyun-Ho Lee, Sang-Youp Yim, and Seung-Han Park

Open Access Open Access

Abstract

We investigated the characteristics of the near- and far-field regions of the interference for nano-metallic double-slits using a two-dimensional finite-difference time-domain (FDTD) method. We have found that the patterns in the near-field region have a phase difference of π with respect to those in the far-field region. A boundary, which separates the interference patterns of the two regions exists as a half circle and grows as the distance between the two slits increase. It is also found that evanescent waves can be enhanced and confined by coating the double-slit with a dielectric cladding.

©2004 Optical Society of America

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Figures (8)
Fig.1.
Fig.1. Schematics of modeled space of a nano-metallic double-slit. Soft source is used for the illumination.

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Fig. 2.
Fig. 2. Intensity distribution of the two-dimensional simulation when the slit width is a=50nm and slit thickness is t=20 nm. (a) Shaded display of TMz mode intensity distribution when the distance between two slits; d=1µm. (b) Line profile of (a). (c) Shaded display of TEz mode intensity distribution when the distance between two slits is d=1µm. (d) Line profile of (c). Solid line represents the line profile just above the metal/air interface, dashed line is the line profile of x=50 nm, and dotted line represents the line profile of x=1µm. The insets of (b) and (d) are the magnifications of dotted and dashed line profiles.

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Fig. 3.
Fig. 3. Interference patterns in near-field and far-field regions when d=1µm and λ=620 nm: (a) Intensity distribution from the entrance of the two slits, (b) Magnified intensity distribution of the region between the two slits after the metal/air interface, (c) contour display of (b), (d) far-field interference pattern.

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Fig. 4.
Fig. 4. Electric field distribution when d=1µm and t=200 nm: (a) amplitude distribution of Ex (x component of electric field), (b) line profile of (a) at the metal/air interface, (c) Ey distribution, and (d) line profile of (c).

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Fig. 5.
Fig. 5. Intensity distribution with various distances between two slits: (a) d=250 nm, (b) d=2 µm, (c) magnified display of the region between two slits when d=2 µm, and (d) magnified display of the region between two slits when d=5 µm.

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Fig. 6.
Fig. 6. Interference patterns with various conditions are presented. (a) and (b) correspond to the results when one of the slits is filled with silicon nitride (n=2) to introduce phase difference resulting in a phase shift of π. (c) Interference pattern with three slits. (d) Interference between slits of different widths.

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Fig. 7.
Fig. 7. Intensity distribution with various slit intervals for a cladding thickness of 50 nm: (a) d=2 µm, (b) magnified display of the region between the two slits.

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Fig. 8.
Fig. 8. Line profiles of the intensity distribution along the y direction when (a) l=20 nm, (b) l=50 nm, (c) l=100 nm, and (d) l=200 nm.

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