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Influence of nonlinear absorption on Raman amplification in Silicon waveguides

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Abstract

We model the TPA-induced free carrier absorption effect in silicon Raman amplifiers and quantify the conditions under which net gain may be obtained. The achievable Raman gain strongly depends on the free carrier lifetime, propagation loss, and on the effective Raman gain coefficient, through pump-induced broadening.

©2004 Optical Society of America

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Figures (5)

Fig. 1.
Fig. 1. Schematic diagram of the SOI waveguides considered for the calculations.
Fig. 2.
Fig. 2. Effective gain, calculated for different values of effective recombination lifetime.
Fig. 3.
Fig. 3. SOI rib waveguide, with photo-generated free carriers within the rib section. The carriers diffuse into the slab, effectively reducing the carrier density within the optically active area.
Fig. 4.
Fig. 4. Effective gain as a function of input pump intensity, for different values of Raman gain coefficient in silicon. Pump-broadening is responsible for the reduction in Raman gain.
Fig. 5.
Fig. 5. Effective gain curves for different values of linear propagation loss in the waveguide.

Equations (4)

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d I P d z = ( α P + α P FCA ( z ) ) I P β I P 2 ,
d I S d z = ( α S + α S FCA ( z ) ) I S + ( g R 2 β ) I P I S .
Δ N = β · I p 2 · τ eff ( 2 · h ν ) .
D = ( n + p ) D n · D p n D n + p D p .
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