Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Mode calculations for a terahertz quantum cascade laser

Open Access Open Access

Abstract

We calculate the loss and confinement factors of modes in terahertz quantum cascade laser structures at frequencies of 1–4 THz. The determination of the total loss splits naturally into the calculation of free-carrier losses in the active region and the waveguide losses. For both, we employ the Drude model. In the case of waveguide losses, we incorporate it into the formalism of the optical scattering matrix and trace the net threshold gain for laser operation in the waveguide for various frequencies as a function of thickness and doping of the buried contact layer. The results indicate that at lower frequencies and high doping, the preferred mode switches character from extended to tightly confined. This may have consequences for the creation of simplified longer-wavelength devices.

©2004 Optical Society of America

Full Article  |  PDF Article
More Like This
Silver-based surface plasmon waveguide for terahertz quantum cascade lasers

Y. J. Han, L. H. Li, J. Zhu, A. Valavanis, J. R. Freeman, L. Chen, M. Rosamond, P. Dean, A. G. Davies, and E. H. Linfield
Opt. Express 26(4) 3814-3827 (2018)

An investigation on optimum ridge width and exposed side strips width of terahertz quantum cascade lasers with metal-metal waveguides

Chao Xu, Seyed Ghasem Razavipour, Zbigniew Wasilewski, and Dayan Ban
Opt. Express 21(26) 31951-31959 (2013)

Operation of terahertz quantum-cascade lasers at 164 K in pulsed mode and at 117 K in continuous-wave mode

Benjamin S. Williams, Sushil Kumar, Qing Hu, and John L. Reno
Opt. Express 13(9) 3331-3339 (2005)

Cited By

Optica participates in Crossref's Cited-By Linking service. Citing articles from Optica Publishing Group journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (3)

Fig. 1.
Fig. 1. Schematic of the laser structure and the radiation modes. Electric current and gain exist in the active region between the top metal layer and the buried contact layer. The quantities varied in our calculations were the thickness of the active layer and that of the contact layer, as well as the contact layer doping, and the photon energy of the laser radiation.
Fig. 2.
Fig. 2. Plot of G w,th = l w /Γ vs. thickness of active layer for a contact layer thickness of 1 μm. Solid (dashed) curves refer to Mode 1 (Mode 0). Note that G w,th is the component of the material threshold gain due to the waveguide losses. The total material threshold gain is obtained by adding L fc , the bulk value of free-carrier attenuation in the active region.
Fig. 3.
Fig. 3. Surface plot of logarithmic threshold gain (log G w,th) vs thickness d of contact layer and doping n of contact layer. The parameters used in Ref. [4] are indicated.
Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.