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Polarization splitter/combiner in high index contrast Bragg reflector waveguides

E. Simova and I. Golub

Open Access Open Access

Abstract

Novel designs of polarization devices based on Bragg reflector waveguides in a high index contrast silicon-on-insulator (SOI) platform have been proposed. Brewster angle condition is incorporated in the periodic structures. Numerical simulations with a 3D semivectorial beam propagation method demonstrate the device performance as TE mode polarizer with high TE to TM extinction ratio and TE/TM mode polarization splitter and combiner with high polarization splitting efficiency.

©2003 Optical Society of America

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Figures (7)
Fig. 1.
Fig. 1. Design structure of the Bragg reflector waveguide for TE polarizer. Si nhigh =3.476, Si 3 N 4 nlow =1.99, Si O 2 n Si O 2 = 1.5 , dhigh =0.37 µm, dlow =1.14 µm, dcore =6.1 µm, ncore =nlow =1.99 (non-depressed core) or ncore =1.8 (depressed core), height of Si substrate hSi =1µm, SiO2 height h Si O 2 = 1 μm , height of Bragg reflectors region hcore =2.2 µm and hair =1.4 µm air.

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Fig. 2.
Fig. 2. Power in TE (triangles) and TM (dots) modes versus propagation distance in the Bragg reflector waveguide with depressed index core for two and five periods.

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Fig. 3.
Fig. 3. Power in TE (triangles) and TM (dots) modes versus propagation distance in the Bragg reflector waveguide with non-depressed index core for two and five periods.

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Fig. 4.
Fig. 4. Asymmetric structure of coupled Bragg reflector waveguides for polarization splitting/combining. Parameters are the same as given in Fig. 1.

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Fig. 5.
Fig. 5. TE mode distribution versus propagation distance in the waveguides in Fig 4. Light is launched in the upper core.

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Fig. 6.
Fig. 6. TM mode distribution versus propagation distance in the waveguides in Fig 4. Light is launched in the upper core.

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Fig. 7.
Fig. 7. Power in TE (triangles) and TM (dots) modes from Figs. 5 and 6 versus propagation distance in the coupled waveguides.

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Equations (3)

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d high = ( 2 k + 1 ) λ 4 ( n high 2 + n low 2 ) 1 2 n high 2 ; d low = ( 2 l + 1 ) λ 4 ( n high 2 + n low 2 ) 1 2 n low 2 , k , l = 0 , 1 , 2 , … ,
d core = m λ 2 1 ( n core 2 − n eff 2 ) 1 2 , m = 1 , 2 , … , .
n eff = n high n low ( n high 2 + n low 2 ) 1 2 and n eff ≤ n core ≤ n low .
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